过渡金属(TM = V, Cr, Mn, Fe, Co, Ni)掺杂GeSe的高 温铁磁半导体薄膜
- 8 December 2023
- journal article
- research article
- Published by Springer Nature in Science China Materials
- Vol. 67 (1) , 279-288
Abstract
No abstract availableKeywords
This publication has 67 references indexed in Scilit:
- Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure EngineeringNano Letters, 2011
- Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperatureJournal of Crystal Growth, 2011
- Strong uniaxial in-plane magnetic anisotropy of (001)- and (011)-oriented thin films on substratesPhysical Review B, 2009
- Carrier-induced ferromagnetism in Ge0.92Mn0.08Te epilayers with a Curie temperature up to 190 KApplied Physics Letters, 2008
- Ferromagnetic semiconductor Ge1−xCrxTe with a Curie temperature of 180KApplied Physics Letters, 2007
- Ferromagnetism in Mn-doped GePhysical Review B, 2002
- Carrier-enhanced ferromagnetism in Ge1−xMnxTeApplied Physics Letters, 2002
- Raman-active modes ofandA first-principles studyPhysical Review B, 1999
- Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis setPhysical Review B, 1996
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972