Xi Zhang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Xi Zhang has a total of 84 co-authors. Here are the top co-authors by number of shared publications:
- Gang Xiang
Sichuan University
33 shared publications Ya Nie
College of Physics, Sichuan University, Chengdu 610064, China
11 shared publicationsMu Lan
Sichuan University
5 shared publicationsGangxu Gu
College of Physical Science and Technology, Sichuan University, Chengdu 610064, China
4 shared publicationsDan Gong
College of Physics, Sichuan University, Chengdu, 610000, China
3 shared publicationsDeren Li
College of Physics, Sichuan University, Chengdu 610064, China
3 shared publications
Latest Publications
- 14 April 2026
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 18 (20) , 10888-10895
Solution-processable Fe-doped SnSe 2 flakes with tunable morphology and robust near-room-temperature ferromagnetism
Snow-like SnSe 2 flakes were successfully synthesized via polymer-assisted deposition, with their morphological evolution and ferromagnetic properties effectively tuned through Fe doping.
- 14 April 2026
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 18 (20) , 10888-10895
Solution-processable Fe-doped SnSe 2 flakes with tunable morphology and robust near-room-temperature ferromagnetism
Snow-like SnSe 2 flakes were successfully synthesized via polymer-assisted deposition, with their morphological evolution and ferromagnetic properties effectively tuned through Fe doping.
- 24 March 2026
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 18 (17) , 9347-9354
Unlocking ultrahigh solar-to-hydrogen efficiency in 2D GaN via S-scheme heterojunctions with HfS x Se 2− x
By constructing stable 2D/2D GaN/HfS x Se 2− x S-scheme heterojunctions, this study achieves suppressed recombination and preserved strong redox potentials, boosting solar-to-hydrogen efficiency from 0.28% to 50.64%.
- 24 March 2026
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 18 (17) , 9347-9354
Unlocking ultrahigh solar-to-hydrogen efficiency in 2D GaN via S-scheme heterojunctions with HfS x Se 2− x
By constructing stable 2D/2D GaN/HfS x Se 2− x S-scheme heterojunctions, this study achieves suppressed recombination and preserved strong redox potentials, boosting solar-to-hydrogen efficiency from 0.28% to 50.64%.
- 1 January 2026
- Published by Royal Society of Chemistry (RSC) in Materials Horizons
Universal robustness of bound magnetic polaron scaling and enhancement of ferromagnetism in amorphous gallium oxide via aliovalent Sn doping over oxygen vacancies
This work provides the first experimental validation of the universality of the BMP scaling law, T C ∝ ( xδ ) 0.5 , and establishes aliovalent donor engineering as a powerful strategy for high-performance oxide spintronics.
- 1 January 2026
- Published by Royal Society of Chemistry (RSC) in Materials Horizons
Universal robustness of bound magnetic polaron scaling and enhancement of ferromagnetism in amorphous gallium oxide via aliovalent Sn doping over oxygen vacancies
This work provides the first experimental validation of the universality of the BMP scaling law, T C ∝ ( xδ ) 0.5 , and establishes aliovalent donor engineering as a powerful strategy for high-performance oxide spintronics.
- 1 December 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 127 (22)
Two-dimensional osmium tetrafluoride with non-collinear ferromagnetism
Two-dimensional (2D) transition metal tetrafluoride materials usually demonstrate antiferromagnetic or altermagnetic ordering, exhibiting potential in spintronics applications. In this work, we systematically investigate the structural, electronic, and magnetic properties of osmium tetrafluoride (OsF4), a member of 2D transition metal tetrafluoride material family, through comprehensive hybrid functional theory calculations. Our data indicate the mechanical, dynamical, and thermodynamical stability of the 2D OsF4. Band structure calculations incorporating spin–orbit coupling reveal that 2D OsF4 behaves as an indirect bandgap semiconductor with a forbidden gap of 2.75 eV. Through detailed analysis of the non-collinear ferromagnetic ground state, we quantitatively determine the dominant magnetic interactions, including exchange coupling, Dzyaloshinskii–Moriya interaction, and magnetic anisotropy energy, demonstrating the prevalence of nearest-neighbor magnetic coupling. Monte Carlo simulations based on the derived Heisenberg model parameters predict a relatively low Curie temperature of 18 K in 2D OsF4. Furthermore, the emergence of a nonzero magnon gap at the Γ point in the calculated magnon spectrum provides direct evidence of significant magnetic anisotropy effects in this system.
- 1 December 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 127 (22)
Two-dimensional osmium tetrafluoride with non-collinear ferromagnetism
Two-dimensional (2D) transition metal tetrafluoride materials usually demonstrate antiferromagnetic or altermagnetic ordering, exhibiting potential in spintronics applications. In this work, we systematically investigate the structural, electronic, and magnetic properties of osmium tetrafluoride (OsF4), a member of 2D transition metal tetrafluoride material family, through comprehensive hybrid functional theory calculations. Our data indicate the mechanical, dynamical, and thermodynamical stability of the 2D OsF4. Band structure calculations incorporating spin–orbit coupling reveal that 2D OsF4 behaves as an indirect bandgap semiconductor with a forbidden gap of 2.75 eV. Through detailed analysis of the non-collinear ferromagnetic ground state, we quantitatively determine the dominant magnetic interactions, including exchange coupling, Dzyaloshinskii–Moriya interaction, and magnetic anisotropy energy, demonstrating the prevalence of nearest-neighbor magnetic coupling. Monte Carlo simulations based on the derived Heisenberg model parameters predict a relatively low Curie temperature of 18 K in 2D OsF4. Furthermore, the emergence of a nonzero magnon gap at the Γ point in the calculated magnon spectrum provides direct evidence of significant magnetic anisotropy effects in this system.
- 27 January 2025
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 17 (10) , 6030-6038
Corn silk-derived biomass carbon materials for low-frequency microwave absorption and energy storage
Biomass carbon (BC) materials derived from agricultural waste have shown great potential in microwave absorption (MA). However, current research mainly focuses on high-frequency (8–18 GHz) MA, and much less effort has been spent on low-frequency (2–8 GHz) MA and other important functionalities such as energy storage. Herein, corn silk rich in carbon is utilized to prepare BC materials with uniform pores and large specific surface area through a straightforward chemical activation and carbonization process. Attributed to its optimized impedance matching, interfacial polarization and (N and O) heteroatom-induced dipole polarization, the optimal sample exhibits superior low-frequency MA capability, including a strong reflection loss (RL) of −75 dB at 6.88 GHz, an effective absorption bandwidth (EAB, RL ≤ −10 dB) down to 2.8 GHz, and excellent radar cross-section reduction. Furthermore, it achieves a high initial discharge specific capacity of 1015.54 mA·h g−1 and stable cycling performance at 0.5 A g−1 in lithium-ion batteries owing to its heteroatom-rich porous structure with a large specific surface area. Our study offers a simple and low-cost way to fabricate high-performance multifunctional BC materials for low-frequency MA and lithium-ion energy storage.
- 27 January 2025
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 17 (10) , 6030-6038
Corn silk-derived biomass carbon materials for low-frequency microwave absorption and energy storage
Biomass carbon (BC) materials derived from agricultural waste have shown great potential in microwave absorption (MA). However, current research mainly focuses on high-frequency (8–18 GHz) MA, and much less effort has been spent on low-frequency (2–8 GHz) MA and other important functionalities such as energy storage. Herein, corn silk rich in carbon is utilized to prepare BC materials with uniform pores and large specific surface area through a straightforward chemical activation and carbonization process. Attributed to its optimized impedance matching, interfacial polarization and (N and O) heteroatom-induced dipole polarization, the optimal sample exhibits superior low-frequency MA capability, including a strong reflection loss (RL) of −75 dB at 6.88 GHz, an effective absorption bandwidth (EAB, RL ≤ −10 dB) down to 2.8 GHz, and excellent radar cross-section reduction. Furthermore, it achieves a high initial discharge specific capacity of 1015.54 mA·h g−1 and stable cycling performance at 0.5 A g−1 in lithium-ion batteries owing to its heteroatom-rich porous structure with a large specific surface area. Our study offers a simple and low-cost way to fabricate high-performance multifunctional BC materials for low-frequency MA and lithium-ion energy storage.
- 31 December 2024
- Published by Springer Nature in Science China Technological Sciences
- Vol. 68 (1) , 1-8
Performance enhancement of triboelectric nanogenerator based on BaTiO3-incorporated PVDF-HFP nanofibers for self-powered wearable sensors
- 31 December 2024
- Published by Springer Nature in Science China Technological Sciences
- Vol. 68 (1) , 1-8
Performance enhancement of triboelectric nanogenerator based on BaTiO3-incorporated PVDF-HFP nanofibers for self-powered wearable sensors
- 11 September 2024
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 16 (40) , 18976-18983
Room-temperature ferromagnetic semiconductor Fe-doped β-Ga 2 O 3 thin films with high saturation magnetization and low coercivity
Fe-doped β-Ga 2 O 3 DMS film exhibits high M s and low H c (70 emu cm −3 and 12 Oe at 300 K). The high M s originates from the Ga vacancy-enhanced ferromagnetic coupling between the BMPs.
- 11 September 2024
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 16 (40) , 18976-18983
Room-temperature ferromagnetic semiconductor Fe-doped β-Ga 2 O 3 thin films with high saturation magnetization and low coercivity
Fe-doped β-Ga 2 O 3 DMS film exhibits high M s and low H c (70 emu cm −3 and 12 Oe at 300 K). The high M s originates from the Ga vacancy-enhanced ferromagnetic coupling between the BMPs.
- 6 May 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (19)
Half-metal Mn2GeI2 monolayer with high Curie temperature and large perpendicular magnetic anisotropy
Two-dimensional (2D) intrinsic ferromagnetic (FM) materials with high Curie temperatures (Tc), large perpendicular magnetic anisotropy (PMA), and large spin polarization are desirable for atomically thin spintronic devices. Herein, we propose a 2D intrinsic FM material Mn2GeI2 monolayer with thermodynamical stability and outstanding FM properties using first-principles calculations. Our calculations show that Mn2GeI2 monolayer is a half-metal with a spin gap of 1.76 eV, which ensures 100% spin polarization ratio at the Fermi level. Importantly, Mn2GeI2 monolayer has a large PMA energy of 2.90 meV and a high Tc of 648 K, ideal for practical applications at room temperature. Further in-depth investigation of microscopic coupling in the Mn2GeI2 monolayer reveals that the robust ferromagnetism mainly resulted from the synthetic effect of Ruderman–Kittel–Kasuya–Yosida exchange interaction between the Mn ion layers and superexchange interaction within the Mn ion layers. Our results give insights into the structure and electronic and magnetic properties of Mn2GeI2 monolayer and provide a promising candidate for 2D spintronic devices.
- 6 May 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (19)
Half-metal Mn2GeI2 monolayer with high Curie temperature and large perpendicular magnetic anisotropy
Two-dimensional (2D) intrinsic ferromagnetic (FM) materials with high Curie temperatures (Tc), large perpendicular magnetic anisotropy (PMA), and large spin polarization are desirable for atomically thin spintronic devices. Herein, we propose a 2D intrinsic FM material Mn2GeI2 monolayer with thermodynamical stability and outstanding FM properties using first-principles calculations. Our calculations show that Mn2GeI2 monolayer is a half-metal with a spin gap of 1.76 eV, which ensures 100% spin polarization ratio at the Fermi level. Importantly, Mn2GeI2 monolayer has a large PMA energy of 2.90 meV and a high Tc of 648 K, ideal for practical applications at room temperature. Further in-depth investigation of microscopic coupling in the Mn2GeI2 monolayer reveals that the robust ferromagnetism mainly resulted from the synthetic effect of Ruderman–Kittel–Kasuya–Yosida exchange interaction between the Mn ion layers and superexchange interaction within the Mn ion layers. Our results give insights into the structure and electronic and magnetic properties of Mn2GeI2 monolayer and provide a promising candidate for 2D spintronic devices.
- Open Access
- 4 February 2024
- Published by MDPI AG in Nanomaterials
- Vol. 14 (3) , 312
Dynamics of Elliptical Magnetic Skyrmion in Defective Racetrack
Recently, it has been reported that the skyrmion Hall effect can be suppressed in an elliptical skyrmion-based device. Given that defects are unavoidable in materials, it is necessary and important to investigate the dynamics of an elliptical skyrmion in a defective racetrack device. In this work, the current-driven dynamics of an elliptical skyrmion in a defective racetrack device are systematically studied using micromagnetic simulations. The system energy analysis reveals that the magnetic parameters of the circular defect play critical roles in determining the type (repulsive or attractive) and the magnitude of the force on the elliptical skyrmion. The simulated trajectories show that the primary motion modes of the elliptical skyrmion in the defective racetrack can be divided into four types, which are dependent on the values of the Dzyaloshinskii–Moriya interaction (DMI) constant Dd, the perpendicular magnetic anisotropy constant Kd, the magnitude of the driving current density J, and the size d of the defect. Further investigation of the motion-mode phases of the skyrmion reveals the synthetic effects of Dd, Kd, J, and d. Finally, the minimum depinning current density J, which linearly depends on the parameters of Dd and Kd, is obtained for a skyrmion completely pinned in the defect. Our findings give insights into the dynamics of an elliptical skyrmion in the presence of a defect with different magnetic parameters in a racetrack device and may be useful for performance enhancement of skyrmion-based racetrack memory devices.
- 4 February 2024
- Published by MDPI AG in Nanomaterials
- Vol. 14 (3) , 312
Open AccessDynamics of Elliptical Magnetic Skyrmion in Defective Racetrack
Recently, it has been reported that the skyrmion Hall effect can be suppressed in an elliptical skyrmion-based device. Given that defects are unavoidable in materials, it is necessary and important to investigate the dynamics of an elliptical skyrmion in a defective racetrack device. In this work, the current-driven dynamics of an elliptical skyrmion in a defective racetrack device are systematically studied using micromagnetic simulations. The system energy analysis reveals that the magnetic parameters of the circular defect play critical roles in determining the type (repulsive or attractive) and the magnitude of the force on the elliptical skyrmion. The simulated trajectories show that the primary motion modes of the elliptical skyrmion in the defective racetrack can be divided into four types, which are dependent on the values of the Dzyaloshinskii–Moriya interaction (DMI) constant Dd, the perpendicular magnetic anisotropy constant Kd, the magnitude of the driving current density J, and the size d of the defect. Further investigation of the motion-mode phases of the skyrmion reveals the synthetic effects of Dd, Kd, J, and d. Finally, the minimum depinning current density J, which linearly depends on the parameters of Dd and Kd, is obtained for a skyrmion completely pinned in the defect. Our findings give insights into the dynamics of an elliptical skyrmion in the presence of a defect with different magnetic parameters in a racetrack device and may be useful for performance enhancement of skyrmion-based racetrack memory devices.
- 8 December 2023
- Published by Springer Nature in Science China Materials
- Vol. 67 (1) , 279-288
过渡金属(TM = V, Cr, Mn, Fe, Co, Ni)掺杂GeSe的高 温铁磁半导体薄膜
- 8 December 2023
- Published by Springer Nature in Science China Materials
- Vol. 67 (1) , 279-288
过渡金属(TM = V, Cr, Mn, Fe, Co, Ni)掺杂GeSe的高 温铁磁半导体薄膜