Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials
Authors:
- Yuta SaitoYSYuta Saito
- Misako MorotaMMMisako Morota
- Kotaro MakinoKMKotaro Makino
- Junji TominagaJTJunji Tominaga
- Alexander V. KolobovAKAlexander V. Kolobov
- Paul FonsPFPaul Fons
Open Access
- 1 November 2021
- journal article
- research article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 135
Abstract
No abstract availableKeywords
This publication has 97 references indexed in Scilit:
- Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 SuperlatticesPhysica Status Solidi (RRL) – Rapid Research Letters, 2021
- Chalcogenide Materials Engineering for Phase‐Change Memory and Future Electronics Applications: From Sb–Te to Bi–TePhysica Status Solidi (RRL) – Rapid Research Letters, 2020
- Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based PlasticityAdvanced Electronic Materials, 2020
- Stoichiometry Determination of Chalcogenide Superlattices by Means of X‐Ray Diffraction and its LimitsPhysica Status Solidi (RRL) – Rapid Research Letters, 2019
- Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and OptimizationAdvanced Functional Materials, 2018
- Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) DevicesSmall, 2018
- Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline FilmAdvanced Materials, 2017
- Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctionsNano Research, 2017
- Self‐organized van der Waals epitaxy of layered chalcogenide structuresPhysica Status Solidi (b), 2015
- Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memoryApplied Physics A, 2007