Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation
Authors:
- Katsushi FujiiKatsushi Fujii
- Takeshi KarasawaTKTakeshi Karasawa
- Kazuhiro OhkawaKazuhiro Ohkawa
- 1 April 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (4L) , L543
Abstract
Hydrogen gas generation from a counterelectrode was clearly observed for the first time using light-illuminated n-type GaN as a working photoelectrode in an electrolyte. The application of extra bias to a working electrode was required to obtain a sufficient volume of generated gas. The reactions at the GaN photoelectrode were both GaN decomposition and water oxidization, simultaneously.Keywords
This publication has 7 references indexed in Scilit:
- Band-Edge Potentials of n-Type and p-Type GaNJournal of the Electrochemical Society, 2003
- Photo-enhanced chemical wet etching of GaNMaterials Science and Engineering: B, 2002
- Electrochemistry and Photoetching of n-GaNJournal of the Electrochemical Society, 2000
- Deep ultraviolet enhanced wet chemical etching of gallium nitrideApplied Physics Letters, 1998
- Highly anisotropic photoenhanced wet etching of n-type GaNApplied Physics Letters, 1997
- Physical Chemistry of Semiconductor−Liquid InterfacesThe Journal of Physical Chemistry, 1996
- Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte InterfaceJournal of the Electrochemical Society, 1995