High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells
Authors:
- Florian WernerFWFlorian Werner
- Walter StalsWSWalter Stals
- Roger GörtzenRGRoger Görtzen
- Boris VeithBVBoris Veith
- Rolf BrendelRBRolf Brendel
- Jan SchmidtJSJan Schmidt
Open Access
- 1 January 2011
- journal article
- Published by Elsevier in Energy Procedia
- Vol. 8, 301-306
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electronic and chemical properties of the c-Si/Al2O3 interfaceJournal of Applied Physics, 2011
- Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of siliconEnergy Procedia, 2011
- Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxideApplied Physics Letters, 2010
- High‐Speed Spatial Atomic‐Layer Deposition of Aluminum Oxide Layers for Solar Cell PassivationAdvanced Materials, 2010
- Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer depositionPhysica Status Solidi (RRL) – Rapid Research Letters, 2010
- Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacksPhysica Status Solidi (RRL) – Rapid Research Letters, 2009
- Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approachApplied Physics Letters, 2008
- Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3Progress in Photovoltaics: Research and Applications, 2008
- Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative chargeSolar Energy Materials and Solar Cells, 2006
- Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3Applied Physics Letters, 2006