Intrinsically Self‐Assembled SrFeO x Topotactic Phase Transition Memristor
Open Access
- 6 November 2026
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- p. e79537
Abstract
Topotactic phase‐transition (TPT) oxide memristors contain ordered 1D oxygen‐vacancy channels (OVCs) that enable anisotropic oxygen‐ion migration and reversible brownmillerite/perovskite transition, offering a materials platform for neuromorphic computing. However, the lack of spatially predefined oxygen‐ion migration sites in conventional TPT films promotes stochastic perovskite SrFeO 3 conductive filament (CF) growth, compromising the response stability and state distinguishability required for reliable temporal signal processing. Here, a single‐component self‐assembled SrFeO x memristor with alternating vertical and horizontal superlattice‐like OVC regions is reported. Structural characterization, density functional theory calculations, and kinetic Monte Carlo simulations indicate that this intrinsic self‐assembled architecture directs oxygen‐ion migration through vertical channels while horizontal regions restrict stray out‐of‐plane transport, promoting localized CF growth. The device combines forming‐free bipolar switching, an ON/OFF ratio of ∼4.4 × 10 3 , low cycle‐to‐cycle (C2C) variation with CV(V SET )/CV(V RESET ) of 3.2%/0.6%, 16‐state retention over 10 4 s, and endurance up to 10 7 pulse cycles. Reproducible device‐to‐device (D2D) switching is obtained across 32 cells, with D2D CV(V SET )/CV(V RESET ) values of 10.1%/5.9%. Finally, the device's short‐term memory transforms temporal inputs into distinguishable states that a fixed linear readout decodes with 84.59% accuracy on a temporal classification task. This work highlights intrinsic OVC‐orientation engineering as a materials‐level strategy toward reliable single‐component TPT memristors.Keywords
Funding Information
- National Natural Science Foundation of China (T2596023)
- National Natural Science Foundation of China (T2596020)
- National Natural Science Foundation of China (62625404)
- National Natural Science Foundation of China (T2450054)
- National Natural Science Foundation of China (T2600157)
- National Key Research and Development Program of China (2021ZD0201203)
- Natural Science Foundation of Hubei Province (2026AFB137)
This publication has 72 references indexed in Scilit:
- Artificial Synapses and Logic Gates Based on Tellurium Oxide Memristors for Artificial Vision ApplicationsAdvanced Functional Materials, 2025
- Ionic‐Liquid‐Gating‐Induced Hydrogenation in Epitaxial Strontium FerriteAdvanced Functional Materials, 2024
- Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic PropertiesAdvanced Functional Materials, 2023
- Topotactic Transition: A Promising Opportunity for Creating New OxidesAdvanced Functional Materials, 2023
- Artificial Optoelectronic Synapses Based on TiNxO2–x/MoS2 Heterojunction for Neuromorphic Computing and Visual SystemAdvanced Functional Materials, 2021
- Room‐Temperature AFM Electric‐Field‐Induced Topotactic Transformation between Perovskite and Brownmillerite SrFeOx with Sub‐Micrometer Spatial ResolutionAdvanced Functional Materials, 2019
- Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland ArraysAdvanced Functional Materials, 2019
- Topotactic Metal–Insulator Transition in Epitaxial SrFeOx Thin FilmsAdvanced Materials, 2017
- Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND FlashAdvanced Materials, 2015
- Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and DensityAdvanced Materials, 2014