Reproducible growth of InAsxSb1−x/InSb strained-layer superlattice photodiodes by low pressure MOCVD

This publication has 16 references indexed in Scilit:

• Infrared magneto-optical and photoluminescence studies of the electronic properties of In(As,Sb) strained-layer superlattices
  Physical Review B, 1991
• Fermi Level Effects on Dislocation Formation in InAs1−xSbx Grown by MOCVD
  MRS Proceedings, 1991
• MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ⩾10μm
  Semiconductor Science and Technology, 1990
• High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector
  IEEE Electron Device Letters, 1990
• Low Pressure Mocvd Growth of InSb
  MRS Proceedings, 1990
• The Preparation of InAsSb/InSb SLS and InSb Photodiodes by MOCVD
  MRS Proceedings, 1990
• Doping-induced suppression of dislocation formation in semiconductors
  Physical Review B, 1989
• Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD
  Journal of Crystal Growth, 1988
• Mechanism of Fermi-level stabilization in semiconductors
  Physical Review B, 1988
• Temperature dependence of intrinsic carrier concentration and density of states effective mass of heavy holes in InSb
  Journal of Physics and Chemistry of Solids, 1988