The Preparation of InAsSb/InSb SLS and InSb Photodiodes by MOCVD
Authors:
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 216
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ⩾10μmSemiconductor Science and Technology, 1990
- High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detectorIEEE Electron Device Letters, 1990
- Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVDJournal of Electronic Materials, 1989
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- Photoluminescence and the band structure of InAsSb strained-layer superlatticesApplied Physics Letters, 1988