Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition
- 1 October 2011
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 50 (10S) , 10PG03
Abstract
In this article, thin hafnium oxide (HfO2) films deposited by atomic layer deposition (ALD) were investigated as a sensing layer on an electrolyte–insulator–semiconductor (EIS) structure for pH sensor applications. Compared with sputtering, ALD provides the possibility of shrinking the thickness of the HfO2 sensing layer down to 3.5 nm with a low drift coefficient (2 film. After annealing at 900 °C, the pH sensitivity could be effectively increased to that near the Nernstian response (59.6 mV/pH), and the drift coefficient (2 film is a promising candidate for pH sensor fabrications.Keywords
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