Abstract
In this work thin narrow band and wideband electromagnetic absorbers based on the resonant behavior of a high‐impedance surface (HIS) are proposed. The absorbing structures consist of a resistive frequency selective surface over a grounded dielectric substrate. In this configuration, the HIS input impedance is equal to the parallel connection between the capacitive impedance of the FSS and the inductive impedance of the grounded dielectric. Simulated results are compared to experimental ones to validate the proposed methodology.

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