Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
Authors:
- M. KhaterMKM. Khater
- F. PagetteFPF. Pagette
- J.-S. RiehJRJ.-S. Rieh
- D. AngellDAD. Angell
- H. ChenHCH. Chen
- J. FlorkeyJFJ. Florkey
- F. GolanFGF. Golan
- D.R. GreenbergDGD.R. Greenberg
- R. GrovesRGR. Groves
- S.J. JengSJS.J. Jeng
- J. JohnsonJJJ. Johnson
Top Cited Papers
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (5) , 258-260
Abstract
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T ) of 207 GHz and an f max extrapolated from Mason's unilateral gain of 285 GHz. f max extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12×2.5 μm 2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm 2 ). Smaller transistors (0.12×0.5 μm 2 ) have an f T of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 k/spl Omega//sq. and an open-base breakdown voltage BV/sub CEO/ of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f T at small lateral dimensions.Keywords
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