Comprehensive Investigation of Truncated Fin GaN FinFET for Improved Analog/RF Performance

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Abstract
This work presents an analysis of the performance of Gallium Nitride Truncated Fin FinFETs (GaN-TF-FinFET) and compares them with conventional (C) FinFET, TF-FinFET, and silicon-on-insulator (SOI) TF-FinFET in analog and RF applications by using advanced simulation techniques at the 7 nm technology node and a low supply voltage (VDS = 0.3 V). This work evaluates key analog and high-frequency performance metrics of the GaN-TF-FinFET. The results show a 60% increase in drain current, leading to improved transconductance and switching speed. Additionally, the subthreshold slope is reduced to 34 mV/decade, representing a 93.74% improvement compared to the C-FinFET. Furthermore, the GaN-TF-FinFET demonstrates the lowest DIBL and the highest electron mobility. Parameters such as stray capacitance, fT, fMAX, GFP, TFP, and GTFP are superior in GaN-TF-FinFET, highlighting its high-frequency performance. Our findings demonstrate significant improvements in device efficiency and signal integrity, positioning GaN-TF-FinFET as a promising device for next-generation high-frequency applications.

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