High-performance uncooled InAsSb-based pCBn mid-infrared photodetectors
Authors:
- Gongrong DengGDGongrong Deng
- Wenyun YangWYWenyun Yang
- Xiaoxia GongXGXiaoxia Gong
- Yiyun ZhangYZYiyun Zhang
- 1 March 2020
- journal article
- research article
- Published by Elsevier in Infrared Physics & Technology
- Vol. 105
Abstract
No abstract availableKeywords
Funding Information
- Chinese Academy of Sciences
This publication has 24 references indexed in Scilit:
- HOT infrared photodetectorsOpto-Electronics Review, 2013
- Band gap of InAsSbwith native lattice constantPhysical Review B, 2012
- Dark current filtering in unipolar barrier infrared detectorsApplied Physics Letters, 2011
- High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlatticesApplied Physics Letters, 2011
- Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperaturesOpto-Electronics Review, 2011
- Miniaturized InSb photovoltaic infrared sensor operating at room temperatureOptical Engineering, 2008
- High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperatureApplied Physics Letters, 2007
- Uncooled photodetectors for the 3–5μm spectral range based on III–V heterojunctionsApplied Physics Letters, 2006
- Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared rangePhysica Status Solidi (a), 2005
- The family (InAs, GaSb, AlSb) and its heterostructures: a selective reviewPhysica E: Low-dimensional Systems and Nanostructures, 2004