Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayer

This publication has 11 references indexed in Scilit:

• Growth of GaN on highly mismatched substrate and its application to novel devices
  Diamond and Related Materials, 1999
• Stress evolution during metalorganic chemical vapor deposition of GaN
  Applied Physics Letters, 1999
• Stress and Defect Control in GaN Using Low Temperature Interlayers
  Japanese Journal of Applied Physics, 1998
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
  Japanese Journal of Applied Physics, 1998
• Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation
  Journal of Electronic Materials, 1997
• Structural Properties of Nitrides Grown by Omvpe on Sapphire Substrate
  MRS Proceedings, 1997
• Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
  Journal of the Electrochemical Society, 1990
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
  Japanese Journal of Applied Physics, 1989
• Effect of AlN Buffer Layer on AlGaN/α-Al₂O₃Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy
  Japanese Journal of Applied Physics, 1988
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
  Applied Physics Letters, 1986