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Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayer
Publication with shared reference
10.1016/s0169-4332(00)00088-x
Home
Publications
Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayer
Publication with shared reference
10.1016/s0169-4332(00)00088-x
Publications with shared reference:
Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayer
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