CMOS OpAmp Resisting to Large Electromagnetic Interferences
Author:
- 3 August 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electromagnetic Compatibility
- Vol. 52 (4) , 1062-1065
Abstract
A CMOS operational amplifier with high immunity to electromagnetic interferences is presented. It is based on an easy modification of the differential pair with active current load. The proposed input stage can be fabricated in standard CMOS technologies, and it neither requires extra mask levels, such as triple well, nor external components. Analysis and results are provided for very large interferences, which arise from the input pin.Keywords
This publication has 6 references indexed in Scilit:
- Design of an Operational Amplifier Input Stage Immune to EMIIEEE Transactions on Electromagnetic Compatibility, 2007
- Efficient reduction of electromagnetic interference effects in operational amplifiersElectronics Letters, 2007
- EMI resisting CMOS differential pair structureElectronics Letters, 2006
- Robust Design of Low EMI Susceptibility CMOS OpAmpIEEE Transactions on Electromagnetic Compatibility, 2004
- Design of a low EMI susceptibility CMOS transimpedance operational amplifierMicroelectronics Reliability, 1998
- Effect of conducted EMI on the DC performance ofoperationalamplifiersElectronics Letters, 1994