Abstract
The sensitivity of nanometric technologies, to electron induced single-event upset (SEU), is analyzed thanks to some microdosimetry calculations performed into nanoscale volumes, using the GEANT4 MicroElec low-energy electron transport module. The electronic showers are shown to be able to deposit ionizing energy comparable to SEU threshold energy. However, down to 16-nm technologies, it is difficult to trigger some SEUs with incident electrons without reducing the applied bias voltages. For high-energy electrons ( ), some other physical process can produce single-event upsets. The potential role of electron/coulombic interaction is investigated.

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