CMOS metal replacement gate transistors using tantalum pentoxide gate insulator
Authors:
- R.A. ChapmanRCR.A. Chapman
- K. JoynerKJK. Joyner
- M. OtobeMOM. Otobe
- S. HattangadySHS. Hattangady
- M. BevanMBM. Bevan
- G.A. BrownGBG.A. Brown
- H. YangHYH. Yang
- Q. HeQHQ. He
- D. RogersDRD. Rogers
- S.J. FangSFS.J. Fang
- R. KraftRKR. Kraft
- 28 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 777-780
Abstract
This paper reports a full CMOS process using a combination of a TiN/W Metal Replacement Gate Transistor design with a high dielectric constant gate insulator of tantalum pentoxide over thin remote plasma nitrided gate oxide. MOS devices with high gate capacitances equivalent to that for <2 nm SiO/sub 2/ but having relatively low gate leakage are reported. Transistors with gate lengths near or below 0.1 /spl mu/m have good characteristics. Working CMOS circuits using Ta/sub 2/O/sub 5/ gate insulator are demonstrated for the first time.Keywords
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