Ultra-thin Ta/sub 2/O/sub 5/SiO/sub 2/ gate insulator with TiN gate technology for 0.1/spl mu/m MOSFETs
Authors:
- MinakataMIMinakata
- SugiiSUSugii
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 135-136
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Parametric Studies on the Laser-Diode-Pumped, Thermal-Lensing-Compensated, Mode-Locked, Q-Switched Nd:YAG LaserJapanese Journal of Applied Physics, 1994
- Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor DepositionJournal of the Electrochemical Society, 1993