Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
- 1 January 2012
- journal article
- research article
- Published by Springer Nature in Nature Communications
- Vol. 3 (1) , 1101
Abstract
Transparent electronic memory would be useful in integrated transparent electronics. However, achieving such transparency produces limits in material composition, and hence, hinders processing and device performance. Here we present a route to fabricate highly transparent memory using SiOx as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, nonvolatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the SiOx maintains the current level as the device size decreases, underscoring their potential for high-density memory applications, and as they are two-terminal based, transitions to three-dimensional memory packages are conceivable. As glass is becoming one of the mainstays of building construction materials, and conductive displays are essential in modern handheld devices, to have increased functionality in form-fitting packages is advantageous.Keywords
This publication has 32 references indexed in Scilit:
- In situ imaging of the conducting filament in a silicon oxide resistive switchScientific Reports, 2012
- Silicon Oxide: A Non-innocent Surface for Molecular Electronics and Nanoelectronics StudiesJournal of the American Chemical Society, 2010
- Growth of graphene from solid carbon sourcesNature, 2010
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper FoilsScience, 2009
- Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectricApplied Physics Letters, 2009
- Large-scale pattern growth of graphene films for stretchable transparent electrodesNature, 2009
- Fine Structure Constant Defines Visual Transparency of GrapheneScience, 2008
- Resistive switching in transition metal oxidesMaterials Today, 2008
- Fabrication of fully transparent nanowire transistors for transparent and flexible electronicsNature Nanotechnology, 2007
- Transparent and Flexible Carbon Nanotube TransistorsNano Letters, 2005