Electrical active defects in HfO2 based metal/oxide/metal devices
Author:
- 25 November 2015
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 49 (1) , 015306
Abstract
Dielectric as well as thermally stimulated current measurements were performed on metal/HfO2/Pt capacitors in order to study the electrical active defects in hafnia thin films. Two thermally activated relaxation processes have been carried out from both measurements. At low temperatures, the relaxation process can be ascribed to the shallow traps level localized at 0.65 eV and generally evidenced by the second ionization of oxygen vacancies. At high temperatures, the relaxation process arises from the diffusion of positively charged oxygen vacancies by overcoming an energetic barrier of about 1 eV.Keywords
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