Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors
Authors:
- 16 October 1979
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 55 (2) , 611-620
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Contrast and resolution of SEM charge-collection images of dislocationsApplied Physics Letters, 1979
- Investigation of Semiconductor Materials and Devices by High Voltage STEM TechniquesCrystal Research and Technology, 1979
- A direct comparison between sem (ebic) and hvem images of crystal defects in semiconductorsUltramicroscopy, 1977
- Electrical Activity of Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1977
- SEM observation and contrast mechanism of stacking faults in an epitaxial silicon layerJournal of Applied Physics, 1974
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971
- Observations of Individual Dislocations and Oxygen Precipitates in Silicon with a Scanning Electron Beam MethodJournal of Applied Physics, 1965
- Photoströme in Halbleitern mit BarrierePhysica Status Solidi (b), 1964
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955