Temperature dependence of GaN high breakdown voltage diode rectifiers
Authors:
- J.-I ChyiJCJ.-I Chyi
- C.-M LeeCLC.-M Lee
- C.-C ChuoCCC.-C Chuo
- X.A CaoXCX.A Cao
- G.T DangGDG.T Dang
- A.P ZhangAZA.P Zhang
- F RenFRF Ren
- S.J PeartonSPS.J Pearton
- S.N.G ChuSCS.N.G Chu
- R.G WilsonRWR.G Wilson
- 1 April 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (4) , 613-617
Abstract
No abstract availableKeywords
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