A review of junction field effect transistors for high-temperature and high-power electronics

This publication has 12 references indexed in Scilit:

• High-voltage operation of field-effect transistors in silicon carbide
  IEEE Electron Device Letters, 1997
• Wide Bandgap Semiconductor Power Devices
  MRS Proceedings, 1997
• Wide bandgap semiconductor materials and devices
  IEEE Transactions on Electron Devices, 1996
• Thermal stability of W ohmic contacts to n-type GaN
  Journal of Applied Physics, 1996
• Ion-implanted GaN junction field effect transistor
  Applied Physics Letters, 1996
• High temperature characteristics of GaAs MESFET devices fabricated with AlAs buffer layer
  IEEE Electron Device Letters, 1995
• An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact
  IEEE Transactions on Electron Devices, 1994
• Complementary GaAs junction-gated heterostructure field effect transistor technology
  1994
• α-SiC buried-gate junction field effect transistors
  Materials Science and Engineering: B, 1992
• Femtojoule high speed planar GaAs E-JFET logic
  IEEE Transactions on Electron Devices, 1978