An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions
- 18 March 2015
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 27 (17) , 2797-2803
Abstract
A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2−x/AlOy/Al structure, is demonstrated. Arising from the photoinduced detrapping, electrode-injection and retrapping of electrons in the CeO2−x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.Keywords
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