High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
Open Access
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 9 (11) , G323-G325
Abstract
High-quality Co films with low resistivity were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from metallorganic precursors and plasma. The deposition characteristics and film properties were investigated. Especially, we compared the results using two cyclopentadienyl Co precursors, and . While low resistivity Co films were deposited by both precursors, much better self-limiting behavior was observed for . Rutherford backscattering and X-ray photoelectron spectroscopy analysis have shown that the impurity contents in PE-ALD Co film were very low. formation by post deposition annealing with Ti capping layer was studied by synchrotron X-ray diffraction.Keywords
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