DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic Temperatures
- 14 May 2010
- journal article
- research article
- Published by Korean Physical Society in Journal of the Korean Physical Society
- Vol. 56 (5) , 1523-1526
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrateThin Solid Films, 2007
- CMOS reliability issues for emerging cryogenic Lunar electronics applicationsSolid-State Electronics, 2006
- Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopyMaterials Science and Engineering: C, 2006
- Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETsSolid-State Electronics, 2004
- Evaluation of MESFET structures from temperature-dependent Hall effect measurementsPhysica Status Solidi (a), 2003