Coherent and Incoherent Excitations of Electron-Doped
- 4 February 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 100 (5) , 056401
Abstract
Resonant photoemission at the Ti and O edges on a Nb-doped thin film revealed that the coherent state (CS) at the Fermi level () had a mainly Ti character whereas the incoherent in-gap state (IGS) positioned below had a mixed character of Ti and O states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight redistribution through hybridization. We discuss the evolution of the excitation spectrum with band filling and rationalize the IGS through a mechanism similar to that proposed by Haldane and Anderson.
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