Computing-in-memory using voltage-controlled spin-orbit torque based MRAM array
Authors:
- Sonal ShreyaSSSonal Shreya
- Alkesh JainAJAlkesh Jain
- Brajesh Kumar KaushikBrajesh Kumar Kaushik
- 1 March 2021
- journal article
- research article
- Published by Elsevier in Microelectronics Journal
- Vol. 109
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast ComputingIEEE Electron Device Letters, 2019
- In-situ, In-Memory Stateful Vector Logic Operations based on Voltage Controlled Magnetic AnisotropyScientific Reports, 2018
- Efficient In-Memory Processing Using SpintronicsIEEE Computer Architecture Letters, 2017
- A spin–orbit torque switching scheme with collinear magnetic easy axis and current configurationNature Nanotechnology, 2016
- Reducing Switching Latency and Energy in STT-MRAM Caches With Field-Assisted WritingIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2015
- Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torqueJournal of Physics D: Applied Physics, 2015
- Spin Orbit Torque Non-Volatile Flip-Flop for High Speed and Low Energy ApplicationsIEEE Electron Device Letters, 2014
- VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICESSPIN, 2012
- Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall EffectPhysical Review Letters, 2012
- Hitting the memory wallACM SIGARCH Computer Architecture News, 1995