Design and analysis of novel field plate-trench composite anode terminal in high-voltage Ga2O3 Schottky Barrier diode

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Abstract
To improve the breakdown voltage of Ga2O3 vertical Schottky Barrier diode (SBD), this article innovatively proposes a novel field plate-trench composite structure. Different from the traditional field plate structures and trench structures, the proposed composite structure innovatively adds a shallow trench under the field plate structure, greatly reducing the depth of the trench and relieving the etching difficulty. At the same time, simulation results show that the field plate-shallow trench composite structure can increase the breakdown voltage of the device from 538 V to 945 V, which is nearly 1.76 times higher than that of traditional devices. The new field plate-trench composite structure greatly improves the breakdown voltage of Ga2O3 vertical SBD, while also increasing the forward characteristics and the reliability of the device, having superiority in size, and alleviating the difficulty of the process. Our research work also has guiding significance for the research of other wide bandgap power devices.
Funding Information
  • National Natural Science Foundation of China (62104199)
  • Key R & D project of Xi'an, China (23LLRH0048)
  • Key R & D plan of Shaanxi province, China (2023GXLH-084)

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