Comprehensive comparison of electrical and reliability characteristics of various copper barrier films
Authors:
- 1 May 2011
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 29 (3)
Abstract
The physical, electrical, and reliability characteristics of various Copper (Cu) barrier films, including SiC, SiCN, SiCO, SiCNO, and SiN, were investigated. The experimental results indicate that the SiN film is the best barrier film against Cu diffusion, adheres strongly to Cu film, and exhibits reliable electromigration (EM) performance, but its dielectric constant is too high. Nitrogen-doped or oxygen-doped silicon carbide films (SiCN or SiCO) have a lower dielectric constant, but at the cost of reduced reliability. SiCNO film that is doped with both nitrogen and oxygen exhibits more reliable EM and stress-migration with a comparable physical and electrical performance to that of the SiN film.Keywords
This publication has 20 references indexed in Scilit:
- Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor depositionJournal of Vacuum Science & Technology B, 2010
- Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu∕porous ultralow-k interconnectsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005
- Development and Characterization of a PECVD Silicon Nitride for Damascene ApplicationsJournal of the Electrochemical Society, 2004
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC:N:H FilmsJapanese Journal of Applied Physics, 2003
- Low dielectric constant a-SiOC:H films as copper diffusion barrierJournal of Applied Physics, 2003
- Properties of Low-k Copper Barrier SiOCH Film Deposited by PECVD Using Hexamethyldisiloxane and N[sub 2]OJournal of the Electrochemical Society, 2003
- Properties of low-k SiCOH films prepared by plasma-enhanced chemical vapor deposition using trimethylsilaneMicroelectronics Journal, 2002
- Effects of Ammonia Plasma Treatment on the Electrical Properties of Plasma-Enhanced Chemical Vapor Deposition Amorphous Hydrogenated Silicon Carbide FilmsJapanese Journal of Applied Physics, 2002
- Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputteringJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
- Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene ProcessJapanese Journal of Applied Physics, 2001