Performance enhancement of GaN-based light-emitting diodes by surface plasmon coupling and scattering grating
Authors:
- 12 April 2013
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 48 (16) , 5673-5679
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Photo-enhanced chemical etched GaN LED on silicon substrateJournal of Crystal Growth, 2011
- Enhanced light output from vertical light-emitting diodes with an imprinted highly refractive polymer layerCurrent Applied Physics, 2011
- Enhancement of light extraction from light emitting diodesPhysics Reports, 2011
- Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodesApplied Physics Letters, 2007
- Solid-State Light Sources Getting SmartScience, 2005
- Cubic-phase GaN light-emitting diodesApplied Physics Letters, 1999
- InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopyApplied Physics Letters, 1998
- Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effectApplied Physics Letters, 1998
- Defect structure in selectively grown GaN films with low threading dislocation densityApplied Physics Letters, 1997
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONSApplied Physics Letters, 1962