Photo-enhanced chemical etched GaN LED on silicon substrate

This publication has 26 references indexed in Scilit:

• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
  Japanese Journal of Applied Physics, 2007
• High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
  Applied Physics Letters, 2005
• GaN-based waveguide devices for long-wavelength optical communications
  Applied Physics Letters, 2003
• Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
  Applied Physics Letters, 2002
• High-density Er-implanted GaN optical memory devices
  Applied Optics, 2001
• Wet etching of GaN grown by molecular beam epitaxy on Si(111)
  Semiconductor Science and Technology, 2000
• Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)
  Journal of Crystal Growth, 2000
• 30% external quantum efficiency from surface textured, thin-film light-emitting diodes
  Applied Physics Letters, 1993
• Selective-area epitaxy for GaAs-on-InP optoelectronic integrated circuits (OEICs)
  Semiconductor Science and Technology, 1993
• Hybrid optoelectronic integrated circuit
  Applied Optics, 1987