High-Performance Chain Scissionable Resists for Extreme Ultraviolet Lithography: Discovery of the Photoacid Generator Structure and Mechanism
- 30 June 2022
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 34 (13) , 6170-6181
Abstract
No abstract availableFunding Information
- Intel Corporation (2885.001)
- Cornell University
This publication has 70 references indexed in Scilit:
- Assessment and Extendibility of Chemically Amplified Resists for Extreme Ultraviolet Lithography: Consideration of Nanolithography beyond 22 nm Half-PitchJapanese Journal of Applied Physics, 2011
- Resolution, Line-Edge Roughness, Sensitivity Tradeoff, and Quantum Yield of High Photo Acid Generator Resists for Extreme Ultraviolet LithographyJapanese Journal of Applied Physics, 2011
- Multiphoton photoresists giving nanoscale resolution that is inversely dependent on exposure timeNature Chemistry, 2011
- Catalytic and Autocatalytic Mechanisms of Acid Amplifiers for Use in EUV PhotoresistsChemistry of Materials, 2010
- Study on Approaches for Improvement of EUV-resist SensitivityJournal of Photopolymer Science and Technology, 2010
- Achieving λ/20 Resolution by One-Color Initiation and Deactivation of PolymerizationScience, 2009
- Testing the TPSS meta-generalized-gradient-approximation exchange-correlation functional in calculations of transition states and reaction barriersThe Journal of Chemical Physics, 2006
- Design and Chemistry of Advanced Deep-UV Photoresists. The Role of the Photoacid Generator.Journal of Photopolymer Science and Technology, 1999
- Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray LithographyJapanese Journal of Applied Physics, 1992
- Chemical amplification in the design of dry developing resist materialsPolymer Engineering & Science, 1983