Jingyuan Deng
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Jingyuan Deng has a total of 30 co-authors. Here are the top co-authors by number of shared publications:
- Christopher Kemper Ober
Department of Materials Science and Engineering Cornell University Ithaca New York USA
4 shared publications - Sean Bailey
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
4 shared publications - Kyoko Nozaki
Department of Chemistry and Biotechnology, Graduate School of Engineering The University of Tokyo Tokyo Japan
3 shared publications - Shaoyi Jiang
Meinig School of Biomedical Engineering, Cornell University, Ithaca, USA
3 shared publications Anthony Delmonico
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, United States
2 shared publicationsChristopher K. Ober
Cornell Univ. (United States)
2 shared publications
Latest Publications
- 8 October 2022
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 144 (42) , 19508-19520
Modular Synthesis of Phthalaldehyde Derivatives Enabling Access to Photoacid Generator-Bound Self-Immolative Polymer Resists with Next-Generation Photolithographic Properties
- 8 October 2022
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 144 (42) , 19508-19520
Modular Synthesis of Phthalaldehyde Derivatives Enabling Access to Photoacid Generator-Bound Self-Immolative Polymer Resists with Next-Generation Photolithographic Properties
- 10 August 2022
- Published by American Chemical Society (ACS) in ACS Macro Letters
- Vol. 11 (9) , 1049-1054
Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography
Conventional chemically amplified resists (CARs) rely on the usage of photoacid generators to serve as the source of chemical amplification. However, acid diffusion inevitably accompanies CARs and has led to the resolution, line edge roughness, and sensitivity (RLS) trade-off, which is the most challenging technical problem for modern photoresists. Herein, we take advantage of the self-immolative property of polyphthalaldehyde (PPA) derivatives to create end-cap enabled chain scissionable resists for extreme ultraviolet (EUV) lithography. The feasibility of this strategy was demonstrated under UV photodegradation experiments. The dose-to-clear (DTC) under EUV radiation was 90 mJ/cm2 for the most promising resist, representing more than a 100-fold improvement over previous PPA resists. Density functional theory (DFT) calculations were conducted to understand the structural origin of end-cap EUV sensitivity.
- 10 August 2022
- Published by American Chemical Society (ACS) in ACS Macro Letters
- Vol. 11 (9) , 1049-1054
Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography
Conventional chemically amplified resists (CARs) rely on the usage of photoacid generators to serve as the source of chemical amplification. However, acid diffusion inevitably accompanies CARs and has led to the resolution, line edge roughness, and sensitivity (RLS) trade-off, which is the most challenging technical problem for modern photoresists. Herein, we take advantage of the self-immolative property of polyphthalaldehyde (PPA) derivatives to create end-cap enabled chain scissionable resists for extreme ultraviolet (EUV) lithography. The feasibility of this strategy was demonstrated under UV photodegradation experiments. The dose-to-clear (DTC) under EUV radiation was 90 mJ/cm2 for the most promising resist, representing more than a 100-fold improvement over previous PPA resists. Density functional theory (DFT) calculations were conducted to understand the structural origin of end-cap EUV sensitivity.
- Open Access
- 4 July 2022
- Published by American Chemical Society (ACS) in ChemRxiv
Synthesis of End-Cap Enabled Self-Immolative Photoresists for Extreme Ultraviolet Lithography
Conventional chemically amplified resists (CARs) rely on the usage of photoacid generators to serve as the source of chemical amplification. However, acid diffusion inevitably accompanies CARs and has led to the resolution, line edge roughness, and sensitivity (RLS) tradeoff, which is the most challenging technical problem for modern photoresists. Herein, we take advantage of the self-immolative property of polyphthalaldehyde (PPA) derivatives to create end-cap enabled chain scissionable resists for extreme ultraviolet (EUV) lithography. The feasibility of this strategy was demonstrated under UV photodegradation experiments. The dose-to-clear (DTC) under EUV radiation was 90 mJ/cm2 for the most promising resist, representing more than a hundredfold improvement over previous PPA resists. Density functional theory (DFT) calculations were conducted to understand the structural origin of end-cap EUV sensitivity.
- 4 July 2022
- Published by American Chemical Society (ACS) in ChemRxiv
Open AccessSynthesis of End-Cap Enabled Self-Immolative Photoresists for Extreme Ultraviolet Lithography
Conventional chemically amplified resists (CARs) rely on the usage of photoacid generators to serve as the source of chemical amplification. However, acid diffusion inevitably accompanies CARs and has led to the resolution, line edge roughness, and sensitivity (RLS) tradeoff, which is the most challenging technical problem for modern photoresists. Herein, we take advantage of the self-immolative property of polyphthalaldehyde (PPA) derivatives to create end-cap enabled chain scissionable resists for extreme ultraviolet (EUV) lithography. The feasibility of this strategy was demonstrated under UV photodegradation experiments. The dose-to-clear (DTC) under EUV radiation was 90 mJ/cm2 for the most promising resist, representing more than a hundredfold improvement over previous PPA resists. Density functional theory (DFT) calculations were conducted to understand the structural origin of end-cap EUV sensitivity.
- 30 June 2022
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 34 (13) , 6170-6181
High-Performance Chain Scissionable Resists for Extreme Ultraviolet Lithography: Discovery of the Photoacid Generator Structure and Mechanism
- 30 June 2022
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 34 (13) , 6170-6181
High-Performance Chain Scissionable Resists for Extreme Ultraviolet Lithography: Discovery of the Photoacid Generator Structure and Mechanism
- 25 May 2022
- Published by SPIE-Intl Soc Optical Eng
- Vol. 12055, 37-138
Scissionable polymer photoresist for EUV lithography
Scissionable polymers are polymers that will depolymerize under different stimuli including acid, base, and free radicals. These polymers have been investigated in the development of photoresists and other degradable materials. This work focuses on the poly(phthalaldehyde), PPA, a family of scissionable polymers. The PPA backbone consists of acetal linkages that are very sensitive to acids. Upon exposure to acids, the polymer chain depolymerizes to its corresponding monomers. This depolymerization behavior makes PPAs excellent candidates as photoresist materials. Several new PPA photoresists are being explored in this work.
- 25 May 2022
- Published by SPIE-Intl Soc Optical Eng
- Vol. 12055, 37-138
Scissionable polymer photoresist for EUV lithography
Scissionable polymers are polymers that will depolymerize under different stimuli including acid, base, and free radicals. These polymers have been investigated in the development of photoresists and other degradable materials. This work focuses on the poly(phthalaldehyde), PPA, a family of scissionable polymers. The PPA backbone consists of acetal linkages that are very sensitive to acids. Upon exposure to acids, the polymer chain depolymerizes to its corresponding monomers. This depolymerization behavior makes PPAs excellent candidates as photoresist materials. Several new PPA photoresists are being explored in this work.
- Open Access
- 1 January 2022
- Published by SPIE-Intl Soc Optical Eng in Journal of Micro/Nanopatterning, Materials, and Metrology
- Vol. 21 (01) , 010901-23
Review of essential use of fluorochemicals in lithographic patterning and semiconductor processing
The use of fluorochemicals in lithography and semiconductor patterning plays a critical role in the success of semiconductor technology. The addition of small quantities of fluorinated materials enables patterning capabilities that are otherwise not possible to achieve, and this leads to superior device performance. The compact size of the fluorine atom and its strong electron-withdrawing characteristics make it stand out in the periodic table and gives fluorocarbon materials unique properties, unmatched by other chemical compounds. Fluorochemicals have found use in semiconductor processing for good technical reasons.
- 1 January 2022
- Published by SPIE-Intl Soc Optical Eng in Journal of Micro/Nanopatterning, Materials, and Metrology
- Vol. 21 (01) , 010901-23
Open AccessReview of essential use of fluorochemicals in lithographic patterning and semiconductor processing
The use of fluorochemicals in lithography and semiconductor patterning plays a critical role in the success of semiconductor technology. The addition of small quantities of fluorinated materials enables patterning capabilities that are otherwise not possible to achieve, and this leads to superior device performance. The compact size of the fluorine atom and its strong electron-withdrawing characteristics make it stand out in the periodic table and gives fluorocarbon materials unique properties, unmatched by other chemical compounds. Fluorochemicals have found use in semiconductor processing for good technical reasons.
- 11 June 2021
- Published by Technical Association of Photopolymers, Japan in Journal of Photopolymer Science and Technology
- Vol. 34 (1) , 71-74
New Approaches to EUV Photoresists: Studies of Polyacetals and Polypeptoids to Expand the Photopolymer Toolbox
Low stochastics, high sensitivity photoresists remain a goal for EUV lithography. Here we present studies of two polymer systems that attempt to make improvements to these resist characteristics using two different chemical approaches. In one system we work on scissionable poly(phthalaldehyde) modified to enable incorporation of photoactive units on each repeat unit of the polymer chain. In a second system we explore peptoid polymers that possess identical molecular size and composition with much higher molecular uniformity than possible by conventional synthetic techniques. We report the results of exposure of these materials to EUV exposures and the chemical changes that occur.
- 11 June 2021
- Published by Technical Association of Photopolymers, Japan in Journal of Photopolymer Science and Technology
- Vol. 34 (1) , 71-74
New Approaches to EUV Photoresists: Studies of Polyacetals and Polypeptoids to Expand the Photopolymer Toolbox
Low stochastics, high sensitivity photoresists remain a goal for EUV lithography. Here we present studies of two polymer systems that attempt to make improvements to these resist characteristics using two different chemical approaches. In one system we work on scissionable poly(phthalaldehyde) modified to enable incorporation of photoactive units on each repeat unit of the polymer chain. In a second system we explore peptoid polymers that possess identical molecular size and composition with much higher molecular uniformity than possible by conventional synthetic techniques. We report the results of exposure of these materials to EUV exposures and the chemical changes that occur.
- 3 June 2020
- Published by American Chemical Society (ACS) in Inorganic Chemistry
- Vol. 59 (12) , 7928-7933
Alternating Copolymerization of CO2 and Cyclohexene Oxide Catalyzed by Cobalt–Lanthanide Mixed Multinuclear Complexes
Heteromultimetallic complexes consisting of three Co(II) ions and one lanthanide ion were synthesized and applied to the alternating copolymerization of CO2 and cyclohexene oxide. Unlike the conventional cobalt(III) salen complexes, the high thermal stability of the present catalyst allowed us to reach a turnover number of 13000, one of the highest values ever reported for multimetallic systems. The chain propagation was first-order to the catalyst, suggesting a cooperative behavior of the metal centers.
- 3 June 2020
- Published by American Chemical Society (ACS) in Inorganic Chemistry
- Vol. 59 (12) , 7928-7933
Alternating Copolymerization of CO2 and Cyclohexene Oxide Catalyzed by Cobalt–Lanthanide Mixed Multinuclear Complexes
Heteromultimetallic complexes consisting of three Co(II) ions and one lanthanide ion were synthesized and applied to the alternating copolymerization of CO2 and cyclohexene oxide. Unlike the conventional cobalt(III) salen complexes, the high thermal stability of the present catalyst allowed us to reach a turnover number of 13000, one of the highest values ever reported for multimetallic systems. The chain propagation was first-order to the catalyst, suggesting a cooperative behavior of the metal centers.
- Open Access
- 18 May 2020
- Published by Royal Society of Chemistry (RSC) in Chemical Science
- Vol. 11 (22) , 5669-5675
Aluminum porphyrins with quaternary ammonium halides as catalysts for copolymerization of cyclohexene oxide and CO 2 : metal–ligand cooperative catalysis
Bifunctional Al porphyrins worked as excellent catalysts for the copolymerization of cyclohexene oxide (CHO) and CO 2 .
- 18 May 2020
- Published by Royal Society of Chemistry (RSC) in Chemical Science
- Vol. 11 (22) , 5669-5675
Open AccessAluminum porphyrins with quaternary ammonium halides as catalysts for copolymerization of cyclohexene oxide and CO 2 : metal–ligand cooperative catalysis
Bifunctional Al porphyrins worked as excellent catalysts for the copolymerization of cyclohexene oxide (CHO) and CO 2 .
- 6 October 2017
- Published by American Chemical Society (ACS) in Macromolecules
- Vol. 50 (20) , 7895-7900
Cationic Co–Salphen Complexes Bisligated by DMAP as Catalysts for the Copolymerization of Cyclohexene Oxide with Phthalic Anhydride or Carbon Dioxide
- 6 October 2017
- Published by American Chemical Society (ACS) in Macromolecules
- Vol. 50 (20) , 7895-7900
Cationic Co–Salphen Complexes Bisligated by DMAP as Catalysts for the Copolymerization of Cyclohexene Oxide with Phthalic Anhydride or Carbon Dioxide