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SiGe based line tunneling field-effect transistors
Home
Publications
SiGe based line tunneling field-effect transistors
SiGe based line tunneling field-effect transistors
Authors:
SG
Stefan Glass
Stefan Glass
ND
Nils von Den Driesch
Nils von Den Driesch
KN
Keyvan Narimani
Keyvan Narimani
DB
Dan Buca
Dan Buca
GM
Gregor Mussler
Gregor Mussler
SM
Siegfried Mantl
Siegfried Mantl
Qing-Tai Zhao
Qing-Tai Zhao
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1 February 2018
journal article
Published by
ISTE Group
in
Composants nanoélectroniques
Vol. 18
(1)
DOI:
10.21494/iste.op.2018.0223
Abstract
In this paper we report on our progress with SiGe gate-normal / line tunneling FETs, highlighting recent advancements by the example of three transistor concepts. We demonstrate the unique (...)
Keywords
FETS
SIGE
GATE
FIELD EFFECT
EFFECT TRANSISTORS
TUNNELING FIELD
BASED LINE
LINE TUNNELING
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