Analysis of electronic parameters and frequency-dependent properties of Au/NiO/n-GaN heterojunctions

This publication has 48 references indexed in Scilit:

• Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering
  Chinese Physics Letters, 2012
• Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
  Physica E: Low-dimensional Systems and Nanostructures, 2010
• Electrical characteristics of Al/polyindole Schottky barrier diodes. I. Temperature dependence
  Journal of Applied Polymer Science, 2009
• On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures
  Microelectronic Engineering, 2008
• The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode
  Synthetic Metals, 2007
• Solid-state dye-sensitized solar cell with p-type NiO as a hole collector
  Solar Energy Materials and Solar Cells, 2005
• AlGaN ∕ GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator
  Applied Physics Letters, 2004
• Electrical characterization of anodically grown native oxide on GaInSb
  Solid-State Electronics, 1998
• Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes
  Solid-State Electronics, 1993
• On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
  Solid-State Electronics, 1986