InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO 2 as gate dielectric
Authors:
- Peng CuiPCPeng Cui
- Jie ZhangJZJie Zhang
- Meng JiaMJMeng Jia
- Guangyang LinGLGuangyang Lin
- Lincheng WeiLWLincheng Wei
- Haochen ZhaoHZHaochen Zhao
- Lars GundlachLGLars Gundlach
- Yuping ZengYZYuping Zeng
- 16 January 2020
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 59 (2) , 020901
Abstract
In this letter, we present the electrical properties of the InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic layer-deposited ZrO 2 as the gate dielectric. The InAlN/GaN MISHEMT with an on/off current ( I on / I off ) ratio of 1.46 × 10 9 as well as a subthreshold swing of 85 mV/dec was achieved. The interface trap density ( D it ) decreased from 1.16 × 10 12 eV −1 cm −2 (at E C − E T = 0.26 eV) to 4.68 × 10 11 eV −1 cm −2 (at E C − E T = 0.40 eV), indicating a good interface property. This study suggests a feasible way for the application of ZrO 2 /InAlN/GaN MISHEMTs.Keywords
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