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InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO 2 as gate dielectric
Publication with shared reference
10.35848/1347-4065/ab67de
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Publications
InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO 2 as gate dielectric
Publication with shared reference
10.35848/1347-4065/ab67de
Publications with shared reference:
InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO
2
as gate dielectric
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