Correction to Breakdown of High-Performance Monolayer MoS2 Transistors
Authors:
- Dominik LembkeDLDominik Lembke
- Andras KisAKAndras Kis
Open Access
- 6 March 2013
- journal article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 7 (4) , 3730
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Mobility engineering and a metal–insulator transition in monolayer MoS2Nature Materials, 2013
- Reply to 'Measurement of mobility in dual-gated MoS2 transistors'Nature Nanotechnology, 2013
- Measurement of mobility in dual-gated MoS2 transistorsNature Nanotechnology, 2013
- Breakdown of High-Performance Monolayer MoS2 TransistorsACS Nano, 2012
- A Graphene Field-Effect DeviceIEEE Electron Device Letters, 2007