Efficient Assembly of Bridged β‐Ga2O3 Nanowires for Solar‐Blind Photodetection
Top Cited Papers
- 30 August 2010
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 20 (22) , 3972-3978
Abstract
An increasing number of applications using ultraviolet radiation have renewed interest in ultraviolet photodetector research. Particularly, solar‐blind photodetectors sensitive to only deep UV (β‐Ga2O3 NWs into high‐performance solar‐blind photodetectors by use of an efficient bridging method is reported. The device is made in a single‐step chemical vapor deposition process and has a high 250‐to‐280‐nm rejection ratio (∼2 × 103), low photocurrent fluctuation (β‐Ga2O3 NW photodetectors make them highly suitable for solar‐blind photodetection.Keywords
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