Bipolar conductivity in Al-Doped SnO₂ prepared by spray pyrolysis method: from thin films to transparent homojunction diodes

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Abstract
Aluminium doped tin oxide (SnO 2 :Al) thin films (with doping concentrations 1 to15 at.%) were deposited on glass substrates through chemical spray pyrolysis and comprehensive evaluations were undertaken to determine their structural, optical, morphological, elemental, and electrical properties. SnO₂:Al thin films exhibited n -type conductivity up to 3 at.% Al 3+ doping. Higher doping levels resulted in a transition to p -type conductivity. The sample having 10 at.% Al doping exhibited enhanced p -type conductivity of 10.02 S cm −1 , with a hole mobility of 8.23 cm 2 V −1 · s −1 and an optical transmittance of 89% in the visible range. A transparent homojunction diode with the structure p -SnO₂:Al/ n -SnO₂ was fabricated with this optimized composition, and its electrical characteristics were evaluated. To the best of our knowledge, this is the first report of a transparent SnO₂-based homojunction diode realized through this approach.

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