Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelength
Authors:
- M. AbeMAM. Abe
- O. WadaOWO. Wada
- S. KomiyaSKS. Komiya
- T. SakuraiTST. Sakurai
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (2) , 167-173
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Multiplication of a threading dislocation in the InP/InGaAsP/InP double hetero-structure grown on InP(111)B substrateJournal of Crystal Growth, 1980
- Zero total dispersion in graded-index single-mode fibresElectronics Letters, 1979
- Composition dependence of the band gaps of In1−xGaxAs1−yPy quaternary solids lattice matched on InP substratesJournal of Applied Physics, 1978
- Efficient coupling of LED and spherical-ended fiberJournal of Applied Physics, 1978
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Growth mechanism of dark-line defects in high radiance GaAlAs LED's1978
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Current dependence of spontaneous carrier lifetimes in GaAs–Ga1-xAlx As double-heterostructure lasersApplied Physics Letters, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973