Postdeposition Anneal on Structural and Sensing Characteristics of High- $\kappa$ $\hbox{Er}_{2} \hbox{TiO}_{5}$ Electrolyte–Insulator–Semiconductor pH Sensors
Authors:
- 7 November 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 33 (1) , 116-118
Abstract
In this letter, we develop an electrolyte-insulator-semiconductor (EIS) device using a high- κ Er2 TiO5 sensing membrane deposited on a Si substrate through cosputtering. We used X-ray diffraction and X-ray photoelectron spectroscopy to study the structural properties of these films annealed at various temperatures. The EIS device incorporating an Er2 TiO5 sensing film annealed at 900°C exhibited a higher sensitivity of 58.4 mV/pH, a lower hysteresis voltage of 4.6 mV, and a smaller drift rate of 1.2 mV/h than other annealing temperatures, presumably suggesting the formation of a well-crystallized Er2TiO5 film and a thinner silicate layer at the oxide/Si interface.Keywords
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