A SiGe HBT BiCMOS technology for mixed signal RF applications

Authors:
  • GFG. Freeman
    G. Freeman
  • SSS. Subbanna
    S. Subbanna
  • RGR. Groves
    R. Groves
  • DGD. Greenberg
    D. Greenberg
  • JMJ. Malinowski
    J. Malinowski
  • DND. Nguyen-Ngoc
    D. Nguyen-Ngoc
  • SJS.J. Jeng
    S.J. Jeng
  • KSK. Stein
    K. Stein
  • KSK. Schonenberg
    K. Schonenberg
  • DKD. Kiesling
    D. Kiesling
  • BMB. Martin
    B. Martin
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Abstract
We present results of IBM's Silicon Germanium HBT 0.35 /spl mu/m L/sub eff/ BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (f/sub t/, f/sub max/). These results demonstrate the potential of designing analog/mixed signal applications with "system-on-a-chip" functionality.