A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications
Authors:
- D. Nguyen-NgocDND. Nguyen-Ngoc
- D.L. HarameDHD.L. Harame
- J.C. MalinowskiJMJ.C. Malinowski
- S.J. JengSJS.J. Jeng
- K.T. SchonenbergKSK.T. Schonenberg
- M.M. GilbertMGM.M. Gilbert
- G.D. BergGBG.D. Berg
- S. WuSWS. Wu
- M. SoyuerMSM. Soyuer
- K.A. TallmanKTK.A. Tallman
- K.J. SteinKSK.J. Stein
- R.A. GrovesRGR.A. Groves
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 89-92
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuitsIEEE Transactions on Electron Devices, 1995
- A monolithic 2.3-Gb/s 100-mW clock and data recovery circuit in silicon bipolar technologyIEEE Journal of Solid-State Circuits, 1993