Solution-processed phosphorus-tungsten oxide film as hole injection layer for application in efficient organic light-emitting diode
Authors:
- Weiwei DengWDWeiwei Deng
- Shirong WangSWShirong Wang
- Yin XiaoYXYin Xiao
- Nonglin ZhouNZNonglin Zhou
- Xianggao LiXLXianggao Li
- 1 October 2018
- journal article
- research article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 85, 106-112
Abstract
No abstract availableKeywords
Funding Information
- National Key R&D Program of China (2016YFB0401303)
- National Natural Science Foundation of China (21676188)
- Key Projects in Natural Science Foundation of Tianjin (16JCZDJC37100)
This publication has 41 references indexed in Scilit:
- Tungsten Oxide Buffer Layers Fabricated in an Inert Sol‐Gel Process at Room‐Temperature for Blue Organic Light‐Emitting DiodesAdvanced Materials, 2013
- Universal energy-level alignment of molecules on metal oxidesNature Materials, 2011
- Materials and Devices toward Fully Solution Processable Organic Light-Emitting DiodesChemistry of Materials, 2010
- Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study by photoelectron spectroscopyOrganic Electronics, 2009
- Low driving voltage in organic light-emitting diodes using MoO3 as an interlayer in hole transport layerSynthetic Metals, 2009
- High-Color-Purity Organic Light-Emitting Diodes Incorporating a Cyanocoumarin-Derived Red Dopant MaterialJournal of the Electrochemical Society, 2008
- High-efficiency low operation voltage organic light-emitting diodesApplied Physics Letters, 2007
- Enhanced performance of organic light emitting device by insertion of conducting/insulating WO3 anodic buffer layerSynthetic Metals, 2005
- Electron Transport Materials for Organic Light-Emitting DiodesChemistry of Materials, 2004
- Anode/organic interface modification by plasma polymerized fluorocarbon filmsJournal of Applied Physics, 2004