Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

In order to obtain some of the parameters required to simulate the electric characteristics of silicon carbide (SiC) power electronic devices in a wide temperature range from startup temperatures $(⩽30°\mathrm{C})$ to steady-operation temperatures $(⩾200°\mathrm{C})$ , we discuss the dependence of the two donor levels on the total donor density $\left(N_{\mathrm{D}}\right)$ as well as the dependence of the electron mobility on the total impurity density $\left(N_{\mathrm{imp}}\right)$ and operating temperature $\left(T\right)$ in the $n$ -type 4H–SiC. The temperature-dependent electron concentration $n\left(T\right)$ and electron mobility ${\mu }_{\mathrm{n}}\left(T\right)$ in the $n$ -type 4H–SiC epilayers with several nitrogen-doping densities are obtained from the Hall-effect measurements. By the graphical peak analysis method (free carrier concentration spectroscopy: FCCS) without any assumptions regarding the donor species, the two types of donor species are detected from $n\left(T\right)$ . Moreover, the energy level and density of each donor species are determined by the FCCS. Using these results, we obtain the parameters with which the dependence of each donor level on $N_{\mathrm{D}}$ can be simulated. Using ${\mu }_{\mathrm{n}}\left(T\right)$ at $T>250\mathrm{K}$ , moreover, we obtain the parameters with which the dependence of the electron mobility on $N_{\mathrm{imp}}$ and $T$ can be simulated.