In order to obtain some of the parameters required to simulate the electric characteristics of silicon carbide (SiC) power electronic devices in a wide temperature range from startup temperatures

(⩽ 30 ° C)

to steady-operation temperatures

(⩾ 200 ° C)

, we discuss the dependence of the two donor levels on the total donor density

(N_{D})

as well as the dependence of the electron mobility on the total impurity density

(N_{imp})

and operating temperature

(T)

in the

n

-type 4H–SiC. The temperature-dependent electron concentration

n (T)

and electron mobility

μ_{n} (T)

in the

n

-type 4H–SiC epilayers with several nitrogen-doping densities are obtained from the Hall-effect measurements. By the graphical peak analysis method (free carrier concentration spectroscopy: FCCS) without any assumptions regarding the donor species, the two types of donor species are detected from

n (T)

. Moreover, the energy level and density of each donor species are determined by the FCCS. Using these results, we obtain the parameters with which the dependence of each donor level on

N_{D}

can be simulated. Using

μ_{n} (T)

T > 250 K

, moreover, we obtain the parameters with which the dependence of the electron mobility on

N_{imp}

and

T

can be simulated.

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