Gate transport mechanism and PBTI in E-mode GaN HEMT with a p - i - n junction gate

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Abstract
In this Letter, the gate transport mechanism and the positive bias temperature instability in an E-mode GaN high electron mobility transistor (HEMT) with a p-i-n junction gate are investigated. The fabricated device demonstrates remarkable normally off characteristics with a high threshold voltage of 2.8 V at room temperature. Comprehensive electrical characterization identifies Poole–Frenkel emission as the dominant gate conduction mechanism, with potential barrier heights of 0.45 and 0.47 eV extracted from temperature-dependent gate leakage. Capacitance-based deep-level transient spectroscopy reveals two distinct trap states in the p-GaN layer located at 0.54 and 0.88 eV above the valence band, respectively. The positive bias temperature instability characteristics and their underlying mechanisms are also analyzed. This study reveals the material–electrical correlation mechanism in p-i-n junction gate HEMTs, providing a theoretical foundation for the further design of highly reliable p-GaN HEMTs.
Funding Information
  • National Natural Science Foundation of China (62474135)
  • National Natural Science Foundation of China (62534009)
  • National Natural Science Foundation of China (62234009)
  • National Natural Science Foundation of China (62090014)
  • National Natural Science Foundation of China (62404165)
  • China Postdoctoral Science Foundation (2025M770531)

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